Tin-Doped Inorganic Amorphous Films for Use as Transparent Monolithic Phosphors
This research topics is based on the studies published in “Scientific Reports“on June 10, 2015. |
![]() Assist Prof. Masai, H., Program-Specific Assoc Prof. Yamada, Y. (from Left) |
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Assist Prof. Masai, H.,1 Program-Specific Assoc Prof. Yamada, Y.,2 Prof Kanemitsu, Y.,3 et al.
1Inorganic Photonics Materials, Division of Materials Chemistry |
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Although inorganic crystalline phosphors can exhibit high quantum efficiency, their use in phosphor films has been limited by a reliance on organic binders that have poor durability when exposed to high-power and/or high excitation energy light sources. To this end, the group reports on a method for producing Sn2+-doped transparent phosphor films through the heat-treatment and dip-coating of a precursor melt. The obtained monolithic inorganic amorphous film exhibits an internal quantum efficiency of over 60% and can potentially utilize transmitted light. The emitting color can be tuned by using the energy transfer process between Sn2++ and Mn2+. It is therefore concluded that amorphous films containing such emission centers can provide a novel emitting films, which is quite different from conventional films consisting of crystalline phosphors and organic binders. |
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The high durability and good emissivity afforded by thin films of monolithic inorganic materials makes them an ideal alternative to the powdered phosphors presently used in light-emitting devices such as white LEDs or solar cells. In established techniques, the conventional wisdom is that the covering glass functions as a passive material, a notion we challenge by suggesting that they possess the potential to improve the device performance. Since this requires an active light conversion mechanism suitable for existing device structures, there is a clear need for a thin-film preparation method that can be adapted to large-area devices. In particular, monolithic inorganic (and ideally amorphous) materials possessing good emissivity will be required for industrial applications of large-area devices. |
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Figure 1. Photographs of Sn2+-doped amorphous phosphor film with and |
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This work was partially supported by the Yazaki Memorial Foundation for Science and Technology, the Asahi Glass Foundation, the Research Institute for Production Development, a Collaborative Research Program of ICR Kyoto University (Grant #2013-62, #2014-31), the SPRITS program of Kyoto University, and a Grant-in-Aid for Young Scientists (A; Number 26709048). The work was also supported by ICR Grants for Young Scientists, and the Sumitomo Electric Industries Group CSR Foundation (to Y.Y. and Y.K.). |
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